BFS25A,115 datasheet

Маркировка

BFS25A,115
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BFS25A,115 Collector- Emitter Voltage Vceo Max: 5 V Configuration: Single Continuous Collector Current: 6.5 mA Current - Collector (ic) (max): 6.5mA Dc Collector/base Gain Hfe Min: 50 Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 500?µA, 1V Dc Current Gain Hfe Max: 50 @ 0.5mA @ 1V Emitter- Base Voltage Vebo: 2 V Frequency - Transition: 5GHz Gain: - ID_COMPONENTS: 1948993 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Frequency: 5000 MHz (Typ) Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Noise Figure (db Typ @ F): 1.8dB ~ 2dB @ 1GHz Package / Case: SC-70-3, SOT-323-3 Power - Max: 32mW Power Dissipation: 32 mW Transistor Polarity: NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (max): 5V Product Category: Transistors RF Bipolar Small Signal RoHS: yes Collector- Emitter Voltage VCEO Max: 5 V Emitter- Base Voltage VEBO: 2 V DC Collector/Base Gain hfe Min: 50 DC Current Gain hFE Max: 50 Gain Bandwidth Product fT: 5000 MHz Factory Pack Quantity: 3000 Part # Aliases: BFS25A T/R Other Names: 934021360115, BFS25A T/R
Количество страниц

13 шт.
Формат

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127,05 KB